Datasheet > FDB6644L86Z

FDB6644L86Z

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	80K
描述
Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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FDB6644L86Z 数据手册

June 2001

FDP6644/FDB6644

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

50 A, 30 V.

R_DS(ON)= 8.5 mW @ V_GS= 10 V

R_DS(ON)= 10.5 mW @ V_GS= 4.5 V

Low gate charge (27 nC typical)

Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS_(ON)specifications.

High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 16

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

150

P_D

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

0.55

W/°C

°C

T_J, T_STG

-65 to +175

Thermal Characteristics

R_qJC

Thermal Resistance, Junction-to-Case

1.8

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

FDB6644

FDP6644

Reel Size

Tape width

24mm

Quantity

FDB6644

13’’

800 units

FDP6644

Tube

n/a

FDP6644 Rev C(W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5

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