FDB6670S_NL

更新时间： 2024-09-27 13:07:47

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FDB6670S_NL 数据手册

May 2003

FDP6670AL/FDB6670AL

N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

This N-Channel Logic Level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

80 A, 30 V

R_DS(ON)= 6.5 mW @ V_GS= 10 V

R_DS(ON)= 8.5 mW @ V_GS= 4.5 V

Critical DC electrical parameters specified at

elevated temperature

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

175°C maximum junction temperature rating

It has been optimized for low gate charge, low R_DS(ON)

and fast switching speed.

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

240

P_D

W/°C

°C

Total Power Dissipation @ T_C= 25°C

0.45

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

–65 to +175

Thermal Characteristics

R_qJC

Thermal Resistance, Junction-to-Case

2.2

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

24mm

Quantity

FDB6670AL

FDP6670AL

13’’

800 units

FDP6670AL

Tube

n/a

FDP6670AL/FDB6670AL Rev D(W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

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