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FDB7042L PDF预览

FDB7042L

更新时间: 2024-11-09 22:29:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 496K
描述
N-Channel Logic Level PowerTrench MOSFET

FDB7042L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:7.76
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):83 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDB7042L 数据手册

 浏览型号FDB7042L的Datasheet PDF文件第2页浏览型号FDB7042L的Datasheet PDF文件第3页浏览型号FDB7042L的Datasheet PDF文件第4页浏览型号FDB7042L的Datasheet PDF文件第5页浏览型号FDB7042L的Datasheet PDF文件第6页浏览型号FDB7042L的Datasheet PDF文件第7页 
June 2000  
PRELIMINARY  
FDP7042L / FDB7042L  
N-Channel Logic Level PowerTrenchMOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
50 A, 30 V.  
RDS(ON) = 9 m@ VGS = 4.5 V  
RDS(ON) = 7.5 m@ VGS = 10 V  
Critical DC electrical parameters specified at  
elevated temperature  
extremely low RDS(ON)  
.
Applications  
High performance trench technology for extremely  
low RDS(ON)  
Synchronous rectifier  
DC/DC converter  
175°C maximum junction temperature rating  
D
D
G
G
G
D
S
S
TO-263AB  
TO-220  
FDP Series  
FDB Series  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
12  
V
V
A
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
(Note 1)  
50  
150  
PD  
83  
0.48  
-65 to +175  
W
W°C  
°C  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
Operating and Storage Junction Temperature Range  
TJ, TSTG  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
1.8  
62.5  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
FDB7042L  
Device  
Reel Size  
13’’  
Tape width  
24mm  
Quantity  
800 units  
45  
FDB7042L  
FDP7042L  
FDP7042L  
Tube  
n/a  
FDP7042L Rev B(W)  
2000 Fairchild Semiconductor Corporation  

FDB7042L 替代型号

型号 品牌 替代类型 描述 数据表
ISL9N306AS3ST FAIRCHILD

类似代替

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
FDB8896 FAIRCHILD

功能相似

N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm

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