型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDB8160_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Me | |
FDB8160-F085 | ONSEMI |
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30 V、80 A、1.5 mΩ、D2PAKN 沟道 PowerTrench® | |
FDB8441 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET | |
FDB8441 | ONSEMI |
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N 沟道,PowerTrench® MOSFET,40V,80A,2.5mΩ | |
FDB8441_10 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 40V, 80A, 2.5m | |
FDB8441_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me | |
FDB8441-F085 | ONSEMI |
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N 沟道,PowerTrench® MOSFET,40V,80A,2.5mΩ | |
FDB8442 | FAIRCHILD |
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N-Channel PowerTrench MOSFET | |
FDB8442_10 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 40V, 80A, 2.9m | |
FDB8442_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Me |