生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDB7080L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
FDB7080L99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
FDB7080S62Z | FAIRCHILD |
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Power Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
FDB8030L | FAIRCHILD |
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N-Channel Logic Level PowerTrench MOSFET | |
FDB8030L | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,逻辑电平,30V,80A,4.5mΩ | |
FDB8030LL86Z | FAIRCHILD |
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Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
FDB8132 | FAIRCHILD |
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N-Channel PowerTrench? MOSFET 30V, 80A, 1.6mΩ | |
FDB8132_F085 | FAIRCHILD |
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Power Field-Effect Transistor, 80A I(D), 30V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me | |
FDB8160 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ | |
FDB8160_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Me |