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FDB6676SS62Z PDF预览

FDB6676SS62Z

更新时间: 2023-01-03 08:22:50
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 116K
描述
Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

FDB6676SS62Z 数据手册

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October 2001  
FDP6676S / FDB6676S  
30V N-Channel PowerTrench SyncFET™  
General Description  
Features  
This MOSFET is designed to replace a single MOSFET  
and parallel Schottky diode in synchronous DC:DC  
power supplies. This 30V MOSFET is designed to  
maximize power conversion efficiency, providing a low  
RDS(ON) and low gate charge. The FDP/B6676S  
includes an integrated Schottky diode using Fairchild’s  
monolithic SyncFET technology. The performance of  
38 A, 30 V.  
RDS(ON) = 6.5 m@ VGS = 10 V  
DS(ON) = 8.0 m@ VGS = 4.5 V  
R
Includes SyncFET Schottky body diode  
Low gate charge (40nC typical)  
the FDP/B6676S as the low-side switch in  
a
synchronous rectifier is indistinguishable from the  
performance of the FDP/B6676 in parallel with a  
Schottky diode.  
High performance trench technology for extremely  
low RDS(ON) and fast switching  
High power and current handling capability  
D
D
G
G
G
S
TO-263AB  
FDB Series  
TO-220  
FDP Series  
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
VGSS  
ID  
Gate-Source Voltage  
V
A
±16  
76  
Drain Current – Continuous  
(Note 1)  
(Note 1)  
– Pulsed  
150  
PD  
W
W/°C  
°C  
Total Power Dissipation @ TC = 25°C  
70  
Derate above 25°C  
0.56  
TJ, TSTG  
TL  
Operating and Storage Junction Temperature Range  
–55 to +150  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
°C  
275  
Thermal Characteristics  
RθJC  
Thermal Resistance, Junction-to-Case  
1.8  
55  
°C/W  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
24mm  
Quantity  
FDB6676S  
FDB6676S  
FDP6676S  
13’’  
800  
45  
FDP6676S  
Tube  
n/a  
FDP6676S/FDB6676S Rev. C (W)  
2001 Fairchild Semiconductor Corporation  

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