Datasheet > FDB6696L99Z

FDB6696L99Z

更新时间： 2024-09-29 21:17:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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5页	68K
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数据手册

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FDB6696L99Z 数据手册

January 2002

PRELIMINARY

FDP6696 / FDB6696

N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

· 52 A, 30 V

R_DS(ON)= 10 mW @ V_GS= 10 V

R_DS(ON)= 12.5 mW @ V_GS= 4.5 V

· Critical DC electrical parameters specified at

elevated temperature

Applications

· High performance trench technology for extremely

low R_DS(ON)

· Synchronous rectifier

· DC/DC converter

· 175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

± 16

Drain Current – Continuous

– Pulsed

(Note 1)

150

P_D

Total Power Dissipation @ T_C= 25°C

W/°C

°C

Derate above 25°C

Operating and Storage Junction Temperature Range

0.4

T_J, T_STG

–65 to +175

Thermal Characteristics

R_qJC

Thermal Resistance, Junction-to-Case

2.6

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

FDB6696

FDP6696

Re el Size

Tape width

24mm

Quantity

FDB6696

13’’

800 units

FDP6696

Tube

n/a

Ó2002 Fairchild Semiconductor Corporation

FDP6696 Rev B(W)

12 3 4 5

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