是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | D2PAK | 包装说明: | D2PAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.19 | 雪崩能效等级(Eas): | 285 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 62 A |
最大漏源导通电阻: | 0.0085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 150 A | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDB6670S_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
FDB6670SL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDB6670SL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDB6670SS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDB6676 | FAIRCHILD |
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30V N-Channel Logic Level PowerTrench MOSFET | |
FDB6676L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
FDB6676L99Z | FAIRCHILD |
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Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
FDB6676S | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET⑩ | |
FDB6676SL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me | |
FDB6676SS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me |