EMD6

更新时间： 2024-09-18 22:30:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体小信号双极晶体管数字晶体管
页数	文件大小	规格书
2页	69K
描述
General purpose (dual digital transistors)

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中文翻译

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技术参数
数据手册

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EMD6 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	100	JESD-609代码：	e2
元件数量：	2	极性/信道类型：	NPN/PNP
最大功率耗散 (Abs)：	0.15 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin/Copper (Sn/Cu)
Base Number Matches：	1

EMD6 数据手册

EMD6 / UMD6N / IMD6A

Transistors

General purpose

(dual digital transistors)

EMD6 / UMD6N / IMD6A

!Features

!External dimensions (Units : mm)

1) Both the DTA143T chip and DTC143T chip in an EMT

or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

EMD6

( )

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6

EMD6N

Abbreviated symbol : D6

!Structure

A PNP and NPN digital transistor

(each with a single built in resistor)

1.25

2.1

The following characteristics apply to both the DTr1 and

DTr2, however, the “ −” sign on DTr2 values for the PNP

type have been omitted.

0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : D6

!Equivalent circuit

IMD6A

EMD6 / UMD6N

IMD6A

(4) (5) (6)

(3) (2) (1)

DTr1

DTr2

1.6

2.8

R1=4.7kΩ

(3) (2) (1)

(4) (5) (6)

0.3to0.6

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

!Absolute maximum ratings (Ta = 25°C)

Abbreviated symbol : D6

Limits

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Unit

VCBO

VCEO

VEBO

100

Collector

power

dissipation

∗

EMD6, UMD6N

150 (TOTAL)

300 (TOTAL)

150

IMD6A

Junction temperature

Storage temperature

˚C

Tstg

−55∼+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

中文翻译

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