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EMDA4N20A PDF预览

EMDA4N20A

更新时间: 2024-11-06 17:15:47
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 213K
描述
TO252-2

EMDA4N20A 数据手册

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EMDA4N20A  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
RDSON (MAX.)  
ID  
200V  
140mΩ  
15A  
G
S
UIS, 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±30  
15  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
10.5  
60  
A
Pulsed Drain Current1  
IDM  
IAS  
Avalanche Current  
11  
L = 1mH, ID=11A, RG=25Ω  
L = 0.5mH  
Avalanche Energy  
EAS  
EAR  
60.5  
30.2  
69  
mJ  
Repetitive Avalanche Energy2  
TC = 25 °C  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
27  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
1.8  
°C / W  
JunctiontoAmbient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2013/4/9  
p.1  

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