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EMD60N10F PDF预览

EMD60N10F

更新时间: 2024-11-06 17:15:35
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 372K
描述
TO220F-3

EMD60N10F 数据手册

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EMD60N10F  
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
Pin Description:  
BVDSS  
RDSON (MAX.)  
ID  
100V  
60mΩ  
20A  
Single N Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±25  
20  
UNIT  
Gate-Source Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
12  
A
Pulsed Drain Current1  
IDM  
IAS  
80  
Avalanche Current  
20  
L = 0.1mH, ID=20A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
20  
mJ  
Repetitive Avalanche Energy2  
10  
TC = 25 °C  
30  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
12  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction-to-Case  
4.1  
°C / W  
Junction-to-Ambient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
3Pulsed drain current rating is package limited.  
2022/12/19  
p.1  

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