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EMDA0P10F PDF预览

EMDA0P10F

更新时间: 2024-11-21 17:15:51
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 359K
描述
TO220F-3

EMDA0P10F 数据手册

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EMDA0P10F  
Single P-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
Pin Description:  
BVDSS  
RDSON (MAX.)  
ID  
-100V  
120mΩ  
-22A  
Single P Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
-22  
UNIT  
Gate-Source Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
-15  
A
Pulsed Drain Current1  
IDM  
IAS  
-75  
Avalanche Current  
-15  
L = 0.1mH, ID=-15A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
22.5  
11.25  
38  
mJ  
Repetitive Avalanche Energy2  
TC = 25 °C  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
15  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction-to-Case  
3.3  
°C / W  
Junction-to-Ambient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1  
3Pulsed drain current rating is package limited.  
2022/12/19  
p.1  

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