Datasheet > EMB17C03G

EMB17C03G

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
8页	215K
描述
SOP-8

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中文翻译

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数据手册

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EMB17C03G 数据手册

EMB17C03G

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N‐CH

30V

P‐CH

‐30V

20mΩ

‐8A

BVDSS

17mΩ

10A

DSON (MAX.)

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

V_GS

N‐CH

±20

P‐CH

±20

‐8

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

‐6

Pulsed Drain Current¹

I_DM

I_AS

‐32

‐10

2.45

Avalanche Current

L = 0.1mH, ID=8A, RG=25Ω(N)

L = 0.1mH, ID=‐7A, RG=25Ω(P)

Avalanche Energy

E_AS

3.2

Repetitive Avalanche Energy²

Power Dissipation

L = 0.05mH

T_C= 25 °C

E_AR

P_D

1.6

1.23

°C

T_C= 100 °C

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

100% UIS testing in condition of V_D=15V, L=0.1mH, V_G=10V, I_L=8A, Rated V_DS=30V N‐CH

100% UIS testing in condition of V_D=15V, L=0.1mH, V_G=‐10V, I_L=‐7A, Rated V_DS=‐30V P‐CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction‐to‐Case

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

°C / W

Junction‐to‐Ambient³

62.5

R_JA

203/1/10

p.1

12 3 4 5 6 7 8

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