Datasheet > EMB21N03P

EMB21N03P

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	174K
描述
SOT89-3

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中文翻译

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数据手册

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EMB21N03P 数据手册

EMB21N03P

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

30V

21mΩ

DSON (MAX.)

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate‐Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

4.5

Pulsed Drain Current¹

I_DM

T_A= 25 °C

1.47

Power Dissipation

P_D

°C

T_A= 70 °C

0.94

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

Junction‐to‐Ambient³

°C / W

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³85°C / W when mounted on a 1 in²pad of 2 oz copper.

2012/4/26

p.1

12 3 4 5

中文翻译

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