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EMB18A04VB PDF预览

EMB18A04VB

更新时间: 2024-09-17 17:15:55
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
9页 609K
描述
DFN3.0X3.0A-08

EMB18A04VB 数据手册

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EMB18A04VB  
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor  
▪Product Summary:  
Pin Description:  
Q1  
40V  
18mΩ  
25mΩ  
28A  
Q2  
40V  
18mΩ  
25mΩ  
28A  
BVDSS  
RDSON (MAX.)@VGS=10V  
RDSON (MAX.)@VGS=4.5V  
ID @TC=25  
ID @TA=25℃  
10A  
10A  
Dual N Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
LIMITS  
PARAMETERS/TEST CONDITIONS SYMBOL  
Gate-Source Voltage  
UNIT  
Q1  
Q2  
VGS  
ID  
20/-20 20/-20  
V
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
28  
18  
10  
8
95  
25  
31  
3
16  
24  
9.6  
3.1  
2
28  
18  
10  
8
95  
25  
31  
3
Continuous Drain Current  
ID  
Continuous Drain Current  
A
Pulsed Drain Current1  
Avalanche Current  
IDM  
IAS  
L = 0.1mH  
L = 0.01mH  
L = 0.05mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
EAS  
EAR  
Avalanche Energy  
mJ  
W
Repetitive Avalanche Energy2  
16  
24  
9.6  
3.1  
2
PD  
Power Dissipation  
PD  
Power Dissipation  
W
°C  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q1  
100% UIS testing in condition of VD=35V, L=0.1mH, VG=10V, IL= 15A, Rated VDS=40V N-CH_Q2  
▪THERMAL RESISTANCE RATINGS  
MAXIMUM  
THERMAL RESISTANCE  
Junction-to-Case  
Junction-to-Ambient3  
SYMBOL  
TYPICAL  
UNIT  
Q1  
5.2  
40  
Q2  
5.2  
40  
RθJC  
RθJA  
RθJA  
t10s  
Steady-State  
°C/W  
60  
60  
1Pulse width limited by maximum junction temperature.  
2Duty cycle < 1%  
360°C / W when mounted on a 1 in2 pad of 2 oz copper.  
4Guarantee by Engineering test  
2022/10/31  
P.1  

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