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EMB19T2R PDF预览

EMB19T2R

更新时间: 2024-11-18 21:04:47
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管晶体管
页数 文件大小 规格书
3页 67K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6 PIN

EMB19T2R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-107包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.02 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):82JESD-30 代码:R-PDSO-F6
JESD-609代码:e2元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

EMB19T2R 数据手册

 浏览型号EMB19T2R的Datasheet PDF文件第2页浏览型号EMB19T2R的Datasheet PDF文件第3页 
EMB19  
Transistors  
General purpose (dual digital transistors)  
EMB19  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTA115E chips in a EMT package.  
2) Same size as EMT package, so same mounting  
machine can be used for both.  
3) Transistor elements are independent, eliminating  
interference.  
EMB19  
( )  
( )  
3
4
( )  
5
( )  
2
( )  
6
( )  
1
1.2  
1.6  
zStructure  
Epitaxial planar type  
PNP silicon transistor (Built-in resistor type)  
Each lead has same dimensions  
ROHM : EMT6  
Abbreviated symbol : B19  
The following characteristics apply to both DTr1 and  
DTr2.  
zEquivalent circuit  
EMB19  
(3) (2) (1)  
R1  
R2  
DTr1  
DTr2  
R
1
=100kΩ  
=100kΩ  
R
2
R
1
(4) (5) (6)  
R2  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Unit  
V
Symbol  
Limits  
50  
Supply voltage  
VCC  
40  
V
Input voltage  
VIN  
10  
I
O
30  
Output current  
mA  
I
C (Max.)  
Pd  
20  
Power dissipation  
150 (TOTAL)  
150  
mW  
˚C  
Junction temperature  
Storage temperature  
Tj  
Tstg  
55 to +150  
˚C  
120mW per element must not be exceeded.  
1/2  

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