Datasheet > EMB21A03G

EMB21A03G

更新时间： 2024-09-17 17:15:55

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	858K
描述
SOP-8

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EMB21A03G 数据手册

EMB21A03G

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

RDSON (MAX.)

30V

21mΩ

7.5A

Dual N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

7.5

UNIT

Gate-Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 100 °C

5.5

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_A= 25 °C

T_A= 100 °C

E_AS

E_AR

11.25

5.63

2.0

Repetitive Avalanche Energy²

Power Dissipation

P_D

°C

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

100% UIS testing in condition of V_D=15V, L=0.1mH, V_G=10V, I_L=7.5A, Rated V_DS=30V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

Junction-to-Ambient³

°C / W

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³62.5°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/2/27

p.1

12 3 4 5 6 7

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