Datasheet > EMB18C03H

EMB18C03H

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
10页	563K
描述
EDFN5X6

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EMB18C03H 数据手册

EMB18C03H

N-Channel + P Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

N-CH

30 V

18 mΩ

26 mΩ

28 A

P-CH

-30 V

33 mΩ

48 mΩ

-22 A

-6 A

BVDSS

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

I_D@T_A=25℃

8 A

N Channel + P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

LIMITS

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

UNIT

N-CH

±20

P-CH

±20

-22

-14

-6

V_GS

I_D

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

I_D

Continuous Drain Current

-5

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

EAS

EAR

-36

-35

61.25

30.63

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

28.8

14.4

Repetitive Avalanche Energy²

P_D

Power Dissipation

1.3

P_D

Power Dissipation

°C

1.3

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=30V N-CH

▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=21A, Rated VDS=-30V P-CH

▪THERMAL RESISTANCE RATINGS

MAXIMUM

N-CH P-CH

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient³

SYMBOL

TYPICAL

UNIT

R_θJC

R_θJA

°C/W

62.5

¹Pulse width limited by maximum junction temperature.

²Duty cycle < 1％

³62.5°C / W when mounted on a 1 in²pad of 2 oz copper.

⁴Guarantee by Engineering test

2020/7/28

A.1

P.1

12 3 4 5 6 7...10

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