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DS1270AB-70IND PDF预览

DS1270AB-70IND

更新时间: 2024-01-22 13:21:38
品牌 Logo 应用领域
美信 - MAXIM 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 180K
描述
Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDMA36, 0.740 INCH, DIP-36

DS1270AB-70IND 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MODULE包装说明:,
针数:36Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8473.30.11.40
风险等级:5.61Is Samacsys:N
最长访问时间:70 ns其他特性:5 YEAR DATA RETENTION
JESD-30 代码:R-PDMA-P36JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端子数量:36字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:PIN/PEG端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DS1270AB-70IND 数据手册

 浏览型号DS1270AB-70IND的Datasheet PDF文件第2页浏览型号DS1270AB-70IND的Datasheet PDF文件第3页浏览型号DS1270AB-70IND的Datasheet PDF文件第4页浏览型号DS1270AB-70IND的Datasheet PDF文件第5页浏览型号DS1270AB-70IND的Datasheet PDF文件第6页浏览型号DS1270AB-70IND的Datasheet PDF文件第7页 
19-5615; Rev 11/10  
DS1270Y/AB  
16M Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 5 years minimum data retention in the  
absence of external power  
NC  
A20  
A18  
A16  
A14  
A12  
A7  
1
2
36  
35  
VCC  
A19  
NC  
A15  
A17  
WE  
A13  
A8  
3
4
34  
33  
. Data is automatically protected during power  
loss  
. Unlimited write cycles  
5
6
32  
31  
7
8
30  
29  
. Low-power CMOS operation  
. Read and write access times of 70 ns  
. Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
. Full ±10% VCC operating range (DS1270Y)  
. Optional ±5% VCC operating range  
(DS1270AB)  
A6  
A9  
A11  
OE  
A5  
9
28  
27  
26  
A4  
A3  
10  
11  
12  
13  
14  
15  
16  
17  
18  
25  
24  
23  
22  
21  
A10  
CE  
A2  
A1  
A0  
DQ7  
DQ6  
DQ5  
DQ0  
DQ1  
. Optional industrial temperature range of  
20  
19  
DQ4  
DQ3  
DQ2  
GND  
-40°C to +85°C, designated IND  
36-Pin ENCAPSULATED PACKAGE  
740-mil EXTENDED  
PIN DESCRIPTION  
A0 – A20  
DQ0 - DQ7  
CE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
WE  
OE  
VCC  
GND  
NC  
- No Connect  
DESCRIPTION  
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as  
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control  
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,  
the lithium energy source is automatically switched on and write protection is unconditionally enabled to  
prevent data corruption. There is no limit on the number of write cycles which can be executed and no  
additional support circuitry is required for microprocessor interfacing.  
1 of 8  

DS1270AB-70IND 替代型号

型号 品牌 替代类型 描述 数据表
DS1270AB-70 MAXIM

完全替代

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDMA36, 0.740 INCH, DIP-36
DS1270AB-70# MAXIM

完全替代

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36, 0.740 INCH, ROHS COMPLIANT, EDIP-36

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