5秒后页面跳转
DS1270AB-70 PDF预览

DS1270AB-70

更新时间: 2024-01-03 12:25:45
品牌 Logo 应用领域
美信 - MAXIM 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 180K
描述
Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDMA36, 0.740 INCH, DIP-36

DS1270AB-70 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:0.740 INCH, DIP-36Reach Compliance Code:unknown
风险等级:5.8Is Samacsys:N
最长访问时间:70 ns其他特性:5 YEAR DATA RETENTION PERIOD
JESD-30 代码:R-PDMA-P36JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端口数量:1端子数量:36
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP36,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.085 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

DS1270AB-70 数据手册

 浏览型号DS1270AB-70的Datasheet PDF文件第2页浏览型号DS1270AB-70的Datasheet PDF文件第3页浏览型号DS1270AB-70的Datasheet PDF文件第4页浏览型号DS1270AB-70的Datasheet PDF文件第5页浏览型号DS1270AB-70的Datasheet PDF文件第6页浏览型号DS1270AB-70的Datasheet PDF文件第7页 
19-5615; Rev 11/10  
DS1270Y/AB  
16M Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 5 years minimum data retention in the  
absence of external power  
NC  
A20  
A18  
A16  
A14  
A12  
A7  
1
2
36  
35  
VCC  
A19  
NC  
A15  
A17  
WE  
A13  
A8  
3
4
34  
33  
. Data is automatically protected during power  
loss  
. Unlimited write cycles  
5
6
32  
31  
7
8
30  
29  
. Low-power CMOS operation  
. Read and write access times of 70 ns  
. Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
. Full ±10% VCC operating range (DS1270Y)  
. Optional ±5% VCC operating range  
(DS1270AB)  
A6  
A9  
A11  
OE  
A5  
9
28  
27  
26  
A4  
A3  
10  
11  
12  
13  
14  
15  
16  
17  
18  
25  
24  
23  
22  
21  
A10  
CE  
A2  
A1  
A0  
DQ7  
DQ6  
DQ5  
DQ0  
DQ1  
. Optional industrial temperature range of  
20  
19  
DQ4  
DQ3  
DQ2  
GND  
-40°C to +85°C, designated IND  
36-Pin ENCAPSULATED PACKAGE  
740-mil EXTENDED  
PIN DESCRIPTION  
A0 – A20  
DQ0 - DQ7  
CE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
WE  
OE  
VCC  
GND  
NC  
- No Connect  
DESCRIPTION  
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as  
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control  
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,  
the lithium energy source is automatically switched on and write protection is unconditionally enabled to  
prevent data corruption. There is no limit on the number of write cycles which can be executed and no  
additional support circuitry is required for microprocessor interfacing.  
1 of 8  

DS1270AB-70 替代型号

型号 品牌 替代类型 描述 数据表
DS1270AB-70# MAXIM

完全替代

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36, 0.740 INCH, ROHS COMPLIANT, EDIP-36
DS1270W-150 MAXIM

类似代替

Non-Volatile SRAM Module, 2MX8, 150ns, CMOS, 0.740 INCH, DIP-36

与DS1270AB-70相关器件

型号 品牌 获取价格 描述 数据表
DS1270AB-70# MAXIM

获取价格

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36, 0.740 INCH, ROHS COMPLIANT, EDIP-36
DS1270AB-70# ROCHESTER

获取价格

2MX8 NON-VOLATILE SRAM MODULE, 70ns, PDIP36, 0.740 INCH, ROHS COMPLIANT, EDIP-36
DS1270AB-70IND MAXIM

获取价格

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDMA36, 0.740 INCH, DIP-36
DS1270AB-70IND DALLAS

获取价格

16M Nonvolatile SRAM
DS1270AB-70-IND ETC

获取价格

NVRAM (Battery Based)
DS1270AB-IND DALLAS

获取价格

Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36,
DS1270W MAXIM

获取价格

3.3V 16Mb Nonvolatile SRAM
DS1270W-100 ROCHESTER

获取价格

2MX8 NON-VOLATILE SRAM MODULE, 100ns, DMA36, 0.740 INCH, DIP-36
DS1270W-100 DALLAS

获取价格

Non-Volatile SRAM, 2MX8, 100ns, CMOS, PDIP36,
DS1270W-100IND MAXIM

获取价格

Non-Volatile SRAM Module, 2MX8, 100ns, CMOS, 0.740 INCH, DIP-36