Datasheet > DS1270Y

DS1270Y

更新时间： 2024-09-26 14:57:59

品牌	Logo	应用领域
亚德诺 - ADI		静态存储器
页数	文件大小	规格书
8页	191K
描述
16M非易失SRAM

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中文翻译

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数据手册

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DS1270Y 数据手册

19-5615; Rev 11/10

DS1270Y/AB

16M Nonvolatile SRAM

www.maxim-ic.com

FEATURES

PIN ASSIGNMENT

. 5 years minimum data retention in the

absence of external power

A20

A18

A16

A14

A12

V_CC

A19

A15

A17

A13

. Data is automatically protected during power

loss

. Unlimited write cycles

. Low-power CMOS operation

. Read and write access times of 70 ns

. Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

. Full ±10% V_CCoperating range (DS1270Y)

. Optional ±5% V_CCoperating range

(DS1270AB)

A11

A10

DQ7

DQ6

DQ5

DQ0

DQ1

. Optional industrial temperature range of

DQ4

DQ3

DQ2

GND

-40°C to +85°C, designated IND

36-Pin ENCAPSULATED PACKAGE

740-mil EXTENDED

PIN DESCRIPTION

A0 – A20

DQ0 - DQ7

- Address Inputs

- Data In/Data Out

- Chip Enable

- Write Enable

- Output Enable

- Power (+5V)

- Ground

V_CC

GND

- No Connect

DESCRIPTION

The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as

2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control

circuitry which constantly monitors V_CCfor an out-of-tolerance condition. When such a condition occurs,

the lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. There is no limit on the number of write cycles which can be executed and no

additional support circuitry is required for microprocessor interfacing.

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与DS1270Y相关器件

型号	品牌	获取价格	描述	数据表
DS1270Y/AB	ETC	获取价格	16M Nonvolatile SRAM
DS1270Y-100	DALLAS	获取价格	16M Nonvolatile SRAM
DS1270Y-100	MAXIM	获取价格	Non-Volatile SRAM Module, 2MX8, 100ns, CMOS, PDMA36, 0.740 INCH, DIP-36
DS1270Y-100#	MAXIM	获取价格	Non-Volatile SRAM Module, 2MX8, 100ns, CMOS, PDMA36, 0.740 INCH, DIP-36
DS1270Y-100IND	DALLAS	获取价格	16M Nonvolatile SRAM
DS1270Y-100-IND	ETC	获取价格	NVRAM (Battery Based)
DS1270Y-70	DALLAS	获取价格	16M Nonvolatile SRAM
DS1270Y-70	MAXIM	获取价格	Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDMA36, 0.740 INCH, DIP-36
DS1270Y-70#	MAXIM	获取价格	Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36, 0.740 INCH, EDIP-36
DS1270Y-70IND	DALLAS	获取价格	16M Nonvolatile SRAM