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DS1270Y-70IND PDF预览

DS1270Y-70IND

更新时间: 2024-09-24 22:21:51
品牌 Logo 应用领域
达拉斯 - DALLAS 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 173K
描述
16M Nonvolatile SRAM

DS1270Y-70IND 数据手册

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DS1270Y/AB  
16M Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
ꢀꢁ5 years minimum data retention in the  
absence of external power  
NC  
A20  
A18  
A16  
A14  
A12  
A7  
1
2
36  
35  
VCC  
A19  
NC  
A15  
A17  
WE  
A13  
A8  
3
4
34  
33  
ꢀꢁData is automatically protected during power  
loss  
ꢀꢁUnlimited write cycles  
5
6
32  
31  
7
8
30  
29  
ꢀꢁLow-power CMOS operation  
ꢀꢁRead and write access times as fast as 70 ns  
ꢀꢁLithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
ꢀꢁFull ±10% VCC operating range (DS1270Y)  
ꢀꢁOptional ±5% VCC operating range  
(DS1270AB)  
A6  
A9  
A11  
OE  
A5  
9
28  
27  
26  
A4  
A3  
10  
11  
12  
25  
24  
23  
22  
21  
A10  
CE  
A2  
A1  
13  
14  
15  
16  
17  
18  
A0  
DQ7  
DQ6  
DQ5  
DQ0  
DQ1  
ꢀꢁOptional industrial temperature range of  
20  
19  
DQ4  
DQ3  
DQ2  
GND  
-40°C to +85°C, designated IND  
36-Pin ENCAPSULATED PACKAGE  
740-mil EXTENDED  
PIN DESCRIPTION  
A0 – A20  
DQ0 - DQ7  
CE  
WE  
OE  
VCC  
GND  
NC  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
- No Connect  
DESCRIPTION  
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as  
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control  
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,  
the lithium energy source is automatically switched on and write protection is unconditionally enabled to  
prevent data corruption. There is no limit on the number of write cycles which can be executed and no  
additional support circuitry is required for microprocessor interfacing.  
1 of 8  
033104  

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