Datasheet > DMN3115UDM_15

DMN3115UDM_15

更新时间： 2024-02-26 23:50:02

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	214K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3115UDM_15 数据手册

DMN3115UDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

Very Low Gate Threshold Voltage

Low Input Capacitance

ESD Protected Gate

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_D

T_A= +25°C

3.2A

V_(BR)DSS

R_{DS(on) max}

60mΩ @ V_GS= 4.5V

80mΩ @ V_GS= 2.5V

130mΩ @ V_GS= 1.5V

30V

2.7A

2.1A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT26

Case Material – Molded Plastic, “Green” Molding Compound. UL

Flammability Rating 94V-0

Applications



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208



General Purpose Interfacing Switch

Power Management Functions



Terminal Connections: See Diagram

Weight: 0.015 grams (approximate)

Analog Switch

SOT26

Top View

ESD PROTECTED

Top View

Internal Schematic

Ordering Information (Note 4 & 5)

Part Number

DMN3115UDM-7

DMN3115UDMQ-7

DMN3115UDM-13

DMN3115UDMQ-13

Qualification

Case

Packaging

Commercial

Automotive

Commercial

Automotive

SOT26

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

3N1 = Marking Code

YM = Date Code Marking

Y = Year (ex: U = 2007)

M = Month (ex: 9 = September)

3N1

Date Code Key

Year

2007

2008

2009

2010

2011

2012

2013

2014

2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 5

www.diodes.com

November 2013

DMN3115UDM

Document number: DS31187 Rev. 8 - 2

12 3 4 5

中文翻译

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与DMN3115UDM_15相关器件

型号	品牌	获取价格	描述	数据表
DMN3115UDM-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDM-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3115UDMQ-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDMQ-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3135LVT	DIODES	获取价格	Low On-Resistance
DMN3135LVT_15	DIODES	获取价格	30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3135LVT-7	DIODES	获取价格	Low On-Resistance
DMN313DLT	DIODES	获取价格	Low On-Resistance
DMN313DLT_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN313DLT-7	DIODES	获取价格	Low On-Resistance

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