Datasheet > DMN3150L

DMN3150L

更新时间： 2024-02-19 08:54:50

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
2页	137K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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数据手册

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DMN3150L 数据手册

Product specification

DMN3150L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT-23

R_DS(ON)< 54mΩ @ V_GS= 10V

R_DS(ON)< 72mΩ @ V_GS= 4.5V

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

_DS(ON)< 115mΩ @ V_GS= 2.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

•

SOT-23

Drain

Gate

Source

EQUIVALENT CIRCUIT

Pin Configuration

TOP VIEW

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1)

T_A= 25°C

T_A= 70°C

Pulsed

3.8

3.1

I_D

Drain Current (Note 1)

Body-Diode Continuous Current (Note 1)

2.0

I_DM

I_S

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

1.4

Unit

P_D

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

_J,T_STG

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