Datasheet > DMN313DLT-7

DMN313DLT-7

更新时间： 2024-02-18 10:49:25

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	142K
描述
Low On-Resistance

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中文翻译

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DMN313DLT-7 数据手册

DMN313DLT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

ESD Protected up to 2kV

"Green" Device (Note 2)

I_D

V_(BR)DSS

R_DS(ON)

T_A= 25°C

2Ω @ V_GS= 4V

270mA

210mA

30V

3.2Ω @ V_GS= 2.5V

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: SOT-523

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.002 grams (approximate)

•

Backlighting

DC-DC Converters

Power management functions

•

Drain

SOT-523

Gate

Protection

Diode

Source

Top View

Equivalent Circuit

Top View

Pin-Out

ESD PROTECTED TO 2kV

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN313DLT-7

SOT-523

3000 / Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NA2 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

NA2

M = Month (ex: 9 = September)

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 5

www.diodes.com

August 2011

DMN313DLT

Document number: DS35078 Rev. 2 - 2

12 3 4 5

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