Datasheet > DMN31D5UFO

DMN31D5UFO

更新时间： 2024-11-24 14:55:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	444K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN31D5UFO 数据手册

DMN31D5UFO

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Package Profile

0.6mm  0.4mm Package Footprint

Low On-Resistance

I_Dmax

BV_DSS

R_DS(ON)max

T_A= +25°C

1.5Ω @ V_GS= 4.5V

2.0Ω @ V_GS= 2.5V

3.0Ω @ V_GS= 1.8V

4.5Ω @ V_GS= 1.5V

0.41A

0.35A

0.29A

0.23A

Very Low Gate Threshold Voltage, 1.0V Max

ESD Protected Gate

30V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high efficiency power management applications.



Case: X2-DFN0604-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  NiPdAu over Copper Leadframe; Solderable

per MIL-STD-202, Method 208



General Purpose Interfacing Switch

Power Management Functions

Analog Switch



Weight: 0.001 grams (Approximate)

X2-DFN0604-3

ESD PROTECTED

Bottom View

Top View

Package Pin Configuration

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

10k/Tape & Reel

DMN31D5UFO-7B

X2-DFN0604-3

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

DC = Product Type Marking Code

Top View

Bar Denotes Gate

and Source Side

1 of 7

www.diodes.com

March 2020

DMN31D5UFO

Document number: DS41896 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

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与DMN31D5UFO相关器件

型号	品牌	获取价格	描述	数据表
DMN31D5UFZ	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZ_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ-7B	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D6UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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