5秒后页面跳转
DMN31D5UFZ PDF预览

DMN31D5UFZ

更新时间: 2024-02-26 16:49:37
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 355K
描述
0.62mm x 0.62mm Package Footprint

DMN31D5UFZ 数据手册

 浏览型号DMN31D5UFZ的Datasheet PDF文件第2页浏览型号DMN31D5UFZ的Datasheet PDF文件第3页浏览型号DMN31D5UFZ的Datasheet PDF文件第4页浏览型号DMN31D5UFZ的Datasheet PDF文件第5页浏览型号DMN31D5UFZ的Datasheet PDF文件第6页 
DMN31D5UFZ  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low Package Profile, 0.42mm Maximum Package Height  
0.62mm x 0.62mm Package Footprint  
I
D max  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
Low On-Resistance  
1.5@ VGS = 4.5V  
2.0@ VGS = 2.5V  
3.0@ VGS = 1.8V  
4.5@ VGS = 1.5V  
Very Low Gate Threshold Voltage, 1.0V max  
ESD Protected Gate  
30V  
0.22A  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Description  
Mechanical Data  
This MOSFET has been designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Case: X2-DFN0606-3  
Case Material: Molded Plastic, “Green” Molding Compound  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper leadframe  
Applications  
e4  
Solderable per MIL-STD-202, Method 208  
Weight: 0.001 grams (approximate)  
General Purpose Interfacing Switch  
Power Management Functions  
Analog Switch  
ESD PROTECTED  
Top View  
Package Pin Configuration  
Bottom View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
Case  
Packaging  
DMN31D5UFZ-7B  
X2-DFN0606-3  
10K/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
R6 = Product Type Marking Code  
Top View  
Bar Denotes Gate  
and Source Side  
1 of 6  
www.diodes.com  
June 2014  
© Diodes Incorporated  
DMN31D5UFZ  
Document number: DS36843 Rev. 2 - 2  

与DMN31D5UFZ相关器件

型号 品牌 获取价格 描述 数据表
DMN31D5UFZ_15 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ-7B DIODES

获取价格

0.62mm x 0.62mm Package Footprint
DMN31D5UFZQ DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D6UT DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3210-13 DIODES

获取价格

Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal