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DMN32D2LDF

更新时间： 2024-09-24 09:54:15
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美台 - DIODES /
页数 文件大小 规格书
4页 276K
描述
COMMON SOURCE DUAL N-CHANNEL

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DMN32D2LDF 数据手册

 浏览型号DMN32D2LDF的Datasheet PDF文件第2页浏览型号DMN32D2LDF的Datasheet PDF文件第3页浏览型号DMN32D2LDF的Datasheet PDF文件第4页 
DMN32D2LDF  
COMMON SOURCE DUAL N-CHANNEL  
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
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•
•
•
•
•
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Common Source Dual N-Channel MOSFET  
Low On-Resistance  
Very Low Gate Threshold Voltage, 1.2V max  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Small Surface Mount Package  
ESD Protected Gate  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 3)  
Qualified to AEC-Q 101 Standards for High Reliability  
•
•
Case: SOT-353  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
•
G2  
S
G1  
G
S
G
1
2
SOT-353  
Q
Q
1
2
D
D
2
1
D2  
D1  
ESD PROTECTED  
BOTTOM VIEW  
TOP VIEW  
Schematic Diagram  
TOP VIEW  
Maximum Ratings Q1, Q2 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
30  
Unit  
V
Drain Source Voltage  
Gate-Source Voltage  
Drain Current (Note 1)  
VDSS  
VGSS  
ID  
V
±10  
400  
mA  
Thermal Characteristics Q1, Q2 @TA = 25°C unless otherwise specified  
Total Power Dissipation (Note 1)  
280  
446  
mW  
PD  
Rθ  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
°C/W  
°C  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics Q1, Q2 @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
30  
V
BVDSS  
IDSS  
⎯
⎯
⎯
1
V
V
GS = 0V, ID = 250μA  
DS = 30V, VGS = 0V  
@ TC = 25°C  
⎯
μA  
±10  
±1  
VGS = ±10V, VDS = 0V  
Gate-Body Leakage  
IGSS  
⎯
⎯
μA  
V
GS = ±5V, VDS = 0V  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
0.6  
1.2  
V
VGS(th)  
⎯
V
DS = VGS, ID = 250μA  
VGS = 1.8V, ID = 20mA  
VGS = 2.5V, ID = 20mA  
⎯
⎯
⎯
⎯
⎯
⎯
2.2  
1.5  
1.2  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
V
GS = 4.0V, ID = 100mA  
Forward Transconductance  
Source-Drain Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
100  
0.5  
mS  
V
|Yfs|  
VSD  
⎯
⎯
⎯
1.4  
VDS =10V, ID = 0.1A  
V
GS = 0V, IS = 115mA  
DS = 3V, VGS = 0V  
39  
10  
3.6  
11  
pF  
pF  
pF  
nS  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
Turn-on Time  
Turn-off Time  
ton  
toff  
V
DD = 5V, ID = 10 mA,  
Switching Time  
VGS = 0-5V  
51  
nS  
⎯
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
January 2008  
© Diodes Incorporated  
DMN32D2LDF  
Document number: DS31238 Rev. 3 - 2  
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