Datasheet > DMN32D2LFB4_15

DMN32D2LFB4_15

更新时间： 2024-09-25 01:21:19

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	185K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN32D2LFB4_15 数据手册

DMN32D2LFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

Very Low Gate Threshold Voltage, 1.2V max

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_Dmax

_A= +25C

415mA

V_(BR)DSS

R_DS(on)max

1.2 @ V_GS= 4V

1.5 @ V_GS= 2.5V

2.2 @ V_GS= 1.8V

30V

370mA

300mA

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Mechanical Data

Applications



Case: X2-DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Backlighting

Power Management Functions

DC-DC Converters



Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208



Weight: 0.001 grams (approximate)

Drain

X2-DFN1006-3

Body

Diode

Gate

Protection

Diode

Source

Top View

Pin-Out

Equivalent Circuit

Bottom View

ESD PROTECTED

Ordering Information (Note 4)

Part Number

DMN32D2LFB4-7

DMN32D2LFB4-7B

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

3000

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

DMN32D2LFB4-7

DMN32D2LFB4-7B

DV = Product Type Marking Code

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 5

www.diodes.com

June 2013

DMN32D2LFB4

Document number: DS31124 Rev. 7 - 2

12 3 4 5

中文翻译

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与DMN32D2LFB4_15相关器件

型号	品牌	获取价格	描述	数据表
DMN32D2LFB4-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN32D2LFB4-7B	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN32D2LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN32D2LV-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN32D4SDW	DIODES	获取价格	Low On-Resistance
DMN32D4SDW_15	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN32D4SDW-13	DIODES	获取价格	Small Signal Field-Effect Transistor
DMN32D4SDW-7	DIODES	获取价格	Low On-Resistance
DMN3300U	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3300U-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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