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DMN3200U PDF预览

DMN3200U

更新时间： 2024-09-24 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 146K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN3200U 数据手册

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DMN3200U  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
Low On-Resistance  
•
•
Case: SOT-23  
•
•
•
90 mΩ @ VGS = 4.5V  
110 mΩ @ VGS = 2.5V  
200 mΩ @ VGS = 1.5V  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish ⎯ Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
•
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage  
Low Input Capacitance  
ESD Protected Gate  
Fast Switching Speed  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2, 3 and 5)  
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability  
Drain  
SOT-23  
D
Gate  
Gate  
S
G
Protection  
Diode  
ESD PROTECTED TO 3kV  
TOP VIEW  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
30  
Units  
V
V
A
A
Gate-Source Voltage  
±8  
Drain Current (Note 1)  
2.2  
9
Pulsed Drain Current (Note 1)  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
650  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
192  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
30  
⎯
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA  
μA VDS = 30V, VGS = 0V  
μA  
IGSS  
±5  
VGS = ±8V, VDS = 0V  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
0.45  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 4.5V, ID = 2.2A  
VGS = 2.5V, ID = 2A  
62  
70  
150  
90  
110  
200  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
mΩ  
V
GS = 1.5V, ID = 0.67A  
Forward Transfer Admittance  
Diode Forward Voltage (Note 4)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
5
S
V
|Yfs|  
VSD  
⎯
⎯
⎯
0.9  
VDS =5V, ID = 2.2A  
VGS = 0V, IS = 1A  
⎯
290  
66  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
35  
Notes:  
1. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Short duration pulse test used to minimize self-heating effect.  
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN3200U  
Document number: DS31188 Rev. 4 - 2  
1234

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