Datasheet > DMN3190LDW-13

DMN3190LDW-13

更新时间： 2024-02-06 09:11:26

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	249K
描述
Low On-Resistance

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中文翻译

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数据手册
替代型号

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DMN3190LDW-13 数据手册

DMN3190LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_{D (MAX)}

Package

V_(BR)DSS

R_{DS(ON) (MAX)}

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

190mΩ @ V_GS= 10V

335mΩ @ V_GS= 4.5V

30V

SOT363

ESD Protected Gate

0.75A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data



Case: SOT363

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Alloy42 leadframe.

Applications



Motor Control

Power Management Functions

Load Switch

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (approximate)



D₁

G₂

S₂

Q₁

Q₂

ESD PROTECTED

S₁

G₁

D₂

Top View

Internal Schematic

Top View

Ordering Information (Note 4)

Part Number

DMN3190LDW-7

DMN3190LDW-13

Case

SOT363

Packaging

3000K/Tape & Reel

10000K/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N31 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 5

www.diodes.com

September 2013

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

12 3 4 5

中文翻译

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DMN3190LDW-13 替代型号

型号	品牌	替代类型	描述	数据表
DMN3190LDW-7	DIODES	功能相似	Small Signal Field-Effect Transistor, 1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o

与DMN3190LDW-13相关器件

型号	品牌	获取价格	描述	数据表
DMN3190LDW-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
DMN3190LDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D4UFZ	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN31D5L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDA	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDAQ	DIODES	获取价格	DUAL NCHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDJ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDW	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN31D5UFA	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN31D5UFO	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET

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