Datasheet > DMN31D5UDAQ

DMN31D5UDAQ

更新时间： 2024-11-20 14:53:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	319K
描述
DUAL NCHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN31D5UDAQ 数据手册

DMN31D5UDAQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

_DMax

BV_DSS

R_DS(ON)Max

Very Low Gate Threshold Voltage

T_A= +25°C

0.40A

Low Input Capacitance

1.5Ω @ V_GS= 4.5V

2.0Ω @ V_GS= 2.5V

3.0Ω @ V_GS= 1.8V

4.5Ω @ V_GS= 1.5V

Fast Switching Speed

0.35A

Ultra-Small Surface Mount Package 0.8mm x 0.6mm

ESD Protected Gate

30V

0.28A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen- and Antimony-Free. “Green” Device (Note 3 )

The DMN31D5UDAQ is suitable for automotive applications

requiring specific change control; this part is AEC-Q101

qualified, PPAP capable, and manufactured in IATF 16949

certified facilities.

0.23A

https://www.diodes.com/quality/product-definitions/

Mechanical Data

Description and Applications

•

Case: X2-DFN0806-6

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high-efficiency power management applications.

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish—Matte Tin Annealed over Copper Lead-Frame.

Solderable per MIL-STD-202, Method 208

Weight: 0.001 grams (Approximate)

•

General Purpose Interfacing Switch

Power Management Functions

Analog Switch

•

X2-DFN0806-6

S₂

D₁

G₂

ESD PROTECTED

Gate Protection

Diode

Gate Protection

Diode

D₂

S₁

G₁

Pin Configuration

Top View

Bottom View

Top View

Device Symbol

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN31D5UDAQ-7B

X2-DFN0806-6

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

B7 = Product Type Marking Code

Top View

1 of 7

www.diodes.com

September 2020

DMN31D5UDAQ

Document number: DS42857 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与DMN31D5UDAQ相关器件

型号	品牌	获取价格	描述	数据表
DMN31D5UDJ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDW	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN31D5UFA	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN31D5UFO	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZ_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ-7B	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D6UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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