Datasheet > DMN31D5UDW

DMN31D5UDW

更新时间： 2023-12-06 20:01:57

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	712K
描述
Dual N-Channel Enhancement Mode MOSFET

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中文翻译

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DMN31D5UDW 数据手册

DMN31D5UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_DMax

@T_A= +25°C



Low On-Resistance

BV_DSS

R_DS(ON)Max

Low Gate Threshold Voltage

0.43A

0.37A

0.3A

1.5Ω @ V_GS= 4.5V

2.0Ω @ V_GS= 2.5V

3.0Ω @ V_GS= 1.8V

4.5Ω @ V_GS= 1.5V

Low Input Capacitance

Fast Switching Speed

30V

Low Input/Output Leakage

Ultra-Small Surface-Mount Package

0.25A

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

making it ideal for high-efficiency power-management applications.

Applications

Mechanical Data



Battery operated systems and solid-state relays

Drivers, relays, solenoids, lamps, hammers, displays, memories,

transistors, etc.



Package: SOT363

Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3

Terminal Connections: See Diagram



Power supply converter circuits



Weight: 0.006 grams (Approximate)

SOT363

ESD PROTECTED

Gate Protection

Diode

Top View

Pin-out

Top View

Q1 N-Channel

Q2 N-Channel

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

3,000

10,000

Carrier

DMN31D5UDW-7

DMN31D5UDW-13

SOT363

Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

1 of 8

www.diodes.com

May 2023

DMN31D5UDW

Document number: DS44925 Rev. 3 - 2

12 3 4 5 6 7 8

中文翻译

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与DMN31D5UDW相关器件

型号	品牌	获取价格	描述	数据表
DMN31D5UFA	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN31D5UFO	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZ_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UFZ-7B	DIODES	获取价格	0.62mm x 0.62mm Package Footprint
DMN31D5UFZQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D6UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN31D6UT-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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