Datasheet > DMN3150LW

DMN3150LW

更新时间： 2024-11-07 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	163K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN3150LW 数据手册

DMN3150LW

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Low On-Resistance:

R_DS(ON)< 88mΩ @ V_GS= 4.5V

_DS(ON)< 138mΩ @ V_GS= 2.5V

•

Case: SOT-323

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

•

Drain

SOT-323

Gate

Source

EQUIVALENT CIRCUIT

Pin Configuration

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain Source Voltage

Gate-Source Voltage

Symbol

V_DSS

V_GSS

Value

Unit

±12

Drain Current (Note 1)

T_A= 25°C

T_A= 70°C

Pulsed

1.6

1.2

I_D

Drain Current (Note 1)

Body-Diode Continuous Current (Note 1)

6.4

1.5

I_DM

I_S

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

350

Unit

°C/W

°C

P_D

357

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

T_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

⎯

800

V_GS= 0V, I_D= 250μA

V_DS= 28V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

V_GS= ±19V, V_DS= 0V

⎯

±80

±800

Gate-Body Leakage

I_GSS

⎯

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.62

0.94

1.4

V_GS(th)

V_DS= V_GS, I_D= 250μA

V_GS= 4.5V, I_D= 1.6A

V_GS= 2.5V, I_D= 1.2A

V_DS= 5V, I_D= 2.7A

V_GS= 0V, I_S= 1.5A

⎯

115

138

Static Drain-Source On-Resistance

R_DS(ON)

mΩ

Forward Transconductance

Source-Drain Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance

5.4

|Y_fs|

V_SD

⎯

1.16

⎯

305

C_iss

C_oss

C_rss

⎯

V_DS= 5V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Notes:

1. Device mounted on 1in²FR-4 PCB on 2oz. Copper. t ≤ 10 sec.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

August 2008

DMN3150LW

Document number: DS31514 Rev. 1 - 2

12 3 4

中文翻译

下载PDF

与DMN3150LW相关器件

型号	品牌	获取价格	描述	数据表
DMN3150LW-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3190LDW	DIODES	获取价格	Low On-Resistance
DMN3190LDW_15	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3190LDW-13	DIODES	获取价格	Low On-Resistance
DMN3190LDW-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
DMN3190LDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D4UFZ	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN31D5L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDA	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN31D5UDAQ	DIODES	获取价格	DUAL NCHANNEL ENHANCEMENT MODE MOSFET

与DMN3150LW相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN3150LW

DMN3150LW 数据手册

与DMN3150LW相关器件

与DMN3150LW相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN3150LW

DMN3150LW 数据手册

与DMN3150LW相关器件

与DMN3150LW相关文章

您还可以找

您在本页遇到什么问题？