DMN313DLT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected up to 2kV
"Green" Device (Note 2)
ID
V(BR)DSS
RDS(ON)
TA = 25°C
2Ω @ VGS = 4V
270mA
210mA
30V
3.2Ω @ VGS = 2.5V
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
•
•
•
Backlighting
DC-DC Converters
Power management functions
•
•
Drain
SOT-523
D
Gate
Gate
Protection
Diode
G
S
Source
Top View
Equivalent Circuit
Top View
Pin-Out
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
Case
Packaging
DMN313DLT-7
SOT-523
3000 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NA2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
NA2
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
Code
X
Y
Z
A
B
C
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN313DLT
Document number: DS35078 Rev. 2 - 2