Datasheet > DBFS100R12KE3B320

DBFS100R12KE3B320

更新时间： 2024-01-05 03:50:20

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
7页	321K
描述
IGBT Module

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中文翻译

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数据手册

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DBFS100R12KE3B320 数据手册

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Technische Information / technical information

IGBT-Module

IGBT-modules

FS100R12KE3_B3

Vorläufige Daten

preliminary data

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C

T† = 25°C

I† ÒÓÑ

I†

100

140

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms, T† = 80°C

T† = 25°C

I†ç¢

PÚÓÚ

200

480

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 100 A, V•Š = 15 V, TÝÎ = 25°C

I† = 100 A, V•Š = 15 V, TÝÎ = 125°C

V†Š ÙÈÚ

1,70 2,15

2,00

Gate-Schwellenspannung

gate threshold voltage

I† = 4,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•ŠÚÌ

Q•

5,0

5,8

0,90

7,5

6,5

µC

Gateladung

gate charge

V•Š = -15 V ... +15 V

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

7,10

0,30

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 100 A, V†Š = 600 V

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C

tÁ ÓÒ

tØ

0,26

0,29

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 100 A, V†Š = 600 V

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C

0,03

0,05

µs

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 100 A, V†Š = 600 V

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C

tÁ ÓËË

tË

0,42

0,52

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 100 A, V†Š = 600 V

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C

0,07

0,09

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 100 A, V†Š = 600 V, L» = 50 nH

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓÒ = 3,9 Â, TÝÎ = 125°C

EÓÒ

EÓËË

6,30

9,00

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 100 A, V†Š = 600 V, L» = 50 nH

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 25°C

V•Š = ±15 V, R•ÓËË = 3,9 Â, TÝÎ = 125°C

8,30

13,5

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

400

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,26 K/W

prepared by: Christian Wolf

approved by: Robert Severin

date of publication: 2003-7-31

revision: 2.0

12 3 4 5 6 7

中文翻译

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