Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
35
40
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
70
A
W
V
Gesamt-Verlustleistung
total power dissipation
225
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 35 A, V•Š = 15 V, TÝÎ = 25°C
I† = 35 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,70 2,15
1,90
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 1,50 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,34
6,0
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
2,50
0,09
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,085
0,09
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
0,02
0,03
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,42
0,52
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
0,075
0,12
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 40 nH
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
EÓÒ
EÓËË
2,65
3,50
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 40 nH
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
2,65
4,00
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
140
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
0,55 0,62 K/W
0,40 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
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