Technische Information / technical information
IGBT-Module
IGBT-modules
FZ3600R17KE3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
3600
4800
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
7200
18,0
A
kW
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 3600 A, V•Š = 15 V, TÝÎ = 25°C
I† = 3600 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
2,00 2,45
2,40
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 145 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,2
5,8
42,0
0,5
6,4
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
325
10,5
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 3600 A, V†Š = 900 V
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,73
0,78
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 3600 A, V†Š = 900 V
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 125°C
0,21
0,23
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 3600 A, V†Š = 900 V
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 125°C
tÁ ÓËË
tË
1,50
1,80
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 3600 A, V†Š = 900 V
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 125°C
0,18
0,32
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 3600 A, V†Š = 900 V, L» = 40 nH
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 0,4 Â, TÝÎ = 125°C
EÓÒ
EÓËË
495
745
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 3600 A, V†Š = 900 V, L» = 40 nH
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 0,5 Â, TÝÎ = 125°C
1050
1450
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 1000 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
14000
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
7,00 K/kW
K/kW
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
6,00
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Wölz
date of publication: 2003-4-11
revision: 2.0
approved by: Christoph Lübke
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