Technische Information / technical information
IGBT-Module
IGBT-modules
FS10R12YT3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
10
16
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
20
A
W
V
Gesamt-Verlustleistung
total power dissipation
78,0
+/-20
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 10 A, V•Š = 15 V, TÝÎ = 25°C
I† = 10 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,90 2,45
2,20
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,10
0,0
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
0,70
0,026
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,05
0,05
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
0,02
0,025
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,23
0,35
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,09
0,15
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 70 nH
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
EÓÒ
EÓËË
0,75
1,20
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 70 nH
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,75
1,10
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
35
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
1,60 1,80 K/W
0,45 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
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