Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 225 R17 KE3
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
VCES
1700
V
TC = 80 °C
IC,nom.
IC
225
340
A
A
Kollektor-Dauergleichstrom
DC-collector current
T
C = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
tP = 1 ms, TC = 80°C
TC=25°C, Transistor
ICRM
Ptot
VGES
IF
450
1380
+/- 20V
225
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
A
Periodischer Spitzenstrom
repetitive peak forw. current
IFRM
tp = 1 ms
450
A
Grenzlastintegral der Diode
I2t - value, Diode
I2t
k A2s
kV
V
R = 0V, tp = 10ms, TVj = 125°C
t.b.d.
3,4
Isolations-Prüfspannung
insulation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
min.
typ. max.
Transistor / Transistor
IC = 225A, VGE = 15V, Tvj = 25°C
VCE sat
-
2,0
2,45
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 225A, VGE = 15V, Tvj = 25°C
-
2,4
t.b.d.
Gate-Schwellenspannung
gate threshold voltage
I
C = 9mA, VCE = VGE, Tvj = 25°C
VGE(th)
5,2
5,8
2,55
19
6,4
V
Gateladung
gate charge
V
GE = -15V ... +15V
QG
-
-
-
-
µC
nF
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
Rückwirkungskapazität
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
Cres
-
-
-
0,7
-
5
-
nF
reverse transfer capacitance
-
-
mA
mA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
ICES
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke
date of publication: 2002-07-25
revision: 2.0
1/8
DB_FS225R17KE3_2.0.xls