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DBFS150R17KE3G20 PDF预览

DBFS150R17KE3G20

更新时间: 2024-01-18 14:37:24
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
8页 189K
描述
IGBT Module

DBFS150R17KE3G20 数据手册

 浏览型号DBFS150R17KE3G20的Datasheet PDF文件第2页浏览型号DBFS150R17KE3G20的Datasheet PDF文件第3页浏览型号DBFS150R17KE3G20的Datasheet PDF文件第4页浏览型号DBFS150R17KE3G20的Datasheet PDF文件第5页浏览型号DBFS150R17KE3G20的Datasheet PDF文件第6页浏览型号DBFS150R17KE3G20的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FS 150 R17 KE3 G  
vorläufige Daten  
preliminary data  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
Tvj = 25°C  
VCES  
1700  
V
TC = 80 °C  
IC,nom.  
IC  
150  
240  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
T
C = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collctor current  
tP = 1 ms, TC = 80°C  
TC=25°C, Transistor  
ICRM  
Ptot  
VGES  
IF  
300  
1040  
+/- 20V  
150  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
tp = 1 ms  
300  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kV  
V
R = 0V, tp = 10ms, TVj = 125°C  
t.b.d  
3,4  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
RMS, f = 50 Hz, t = 1 min.  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
IC = 150A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
2,0  
2,45  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 150A, VGE = 15V, Tvj = 125°C  
-
2,4  
-
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 6mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
5,2  
5,8  
1,7  
12  
6,4  
V
Gateladung  
gate charge  
V
GE = -15V ... +15V  
QG  
-
-
-
-
µC  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
Rückwirkungskapazität  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 1700V, VGE = 0V, Tvj = 25°C  
VCE = 1700V, VGE = 0V, Tvj = 125°C  
Cres  
-
-
-
0,45  
-
5
-
nF  
reverse transfer capacitance  
-
-
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
ICES  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Alfons Wiesenthal  
approved by: Christoph Lübke  
date of publication: 2002-07-25  
revision: 2.0  
1/8  
DB_FS150R17KE3G_2.0.xls  

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