Datasheet > CZT2955

CZT2955

更新时间： 2024-01-28 09:03:10

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
2.0W Surface Mount Complementary PNP Silicon Power Transistor

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中文翻译

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数据手册

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CZT2955 数据手册

SMD Type

TransistIoCrs

2.0W Surface Mount Complementary

PNP Silicon Power Transistor

KZT2955 ^(CZT2955)

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

6.50

-0.2

High current (max. 6A).

Low voltage (max. 60V).

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector - emitter votage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCER

VCEO

VEBO

Rating

Unit

-100

-70

-60

-7

Collector current

-6

Base current

-3

Power dissipation

Thermal resistance,Junctiion-to-ambient

Junction temperature

Storage temperature

Tstg

62.5

150

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-60

-70

Typ

Max

Unit

Collector to emitter breakdown voltage

VCEO

VCER

ICEO

ICEV

IC=-30mA

IC=-30mA,RBE=100

VCE=-30V

-700

1.0

Collctor cutoff current

Emitter cutoff current

DC current gain

VCE=-100V,VEB=-1.5V

VEB = -7.0 V

m A

IEBO

-5.0

IC =- 4.0A; VCE =-4.0 V

IC = -6.0A; VCE = -4.0V

IC = -4.0A; IB =- 400mA

hFE

5.0

Collector to emitter saturation voltage

Base to emitter ON voltage

Transition frequency

VCE(sat)

-1.1

-1.5

VBE(on) VCE=-4.0V,IC=-4.0A

IC=- 500mA; VCE =-10V; f = 1.0 MHz

2.5

MHz

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