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CZT2955TR PDF预览

CZT2955TR

更新时间: 2024-02-01 05:09:54
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 76K
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CZT2955TR 数据手册

 浏览型号CZT2955TR的Datasheet PDF文件第2页 
TM  
CZT2955 PNP  
CZT3055 NPN  
Central  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT2955  
and CZT3055 types are surface mount epoxy  
molded complementary silicon transistors  
manufactured by the epitaxial base process,  
designed for surface mounted power amplifier  
applications up to 6.0 amps.  
Semiconductor Corp.  
2.0W SURFACE MOUNT  
COMPLEMENTARY SILICON  
POWER TRANSISTOR  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
V
100  
70  
V
V
V
V
A
A
W
CBO  
CER  
CEO  
EBO  
60  
7.0  
6.0  
3.0  
2.0  
I
C
Base Current  
I
B
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
62.5  
°C  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
µA  
mA  
mA  
V
I
I
I
V
V
V
=30V  
700  
1.0  
5.0  
CEO  
CEV  
EBO  
CE  
CE  
EB  
=100V, V =1.5V  
EB  
=7.0V  
BV  
BV  
* V  
* V  
I =30mA, R =100Ω  
BE  
70  
60  
CER  
CEO  
C
I =30mA  
V
C
I =4.0A, I =400mA  
1.1  
1.5  
70  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=4.0V, I =4.0A  
V
CE  
CE  
CE  
CE  
C
* h  
* h  
V
V
V
=4.0V, I =4.0A  
20  
5.0  
2.5  
C
=4.0V, I =6.0A  
FE  
C
f
=10V, I =500mA, f=1.0MHz  
MHz  
T
C
* Pulsed, 2% D.C.  
R3 (17-June 2004)  

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