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CZT3019_10 PDF预览

CZT3019_10

更新时间: 2024-02-20 17:50:23
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 530K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

CZT3019_10 数据手册

 浏览型号CZT3019_10的Datasheet PDF文件第2页 
CZT3019  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3019 type is  
an NPN silicon transistor manufactured by the epitaxial  
planar process, epoxy molded in a surface mount  
package, designed for high current general purpose  
amplifier applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
140  
80  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
7.0  
V
Continuous Collector Current  
Peak Collector Current  
I
1.0  
A
C
I
1.5  
A
CM  
Power Dissipation  
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
UNITS  
I
I
V
V
=90V  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
=5.0V  
10  
BV  
BV  
BV  
I =100μA  
140  
80  
CBO  
CEO  
EBO  
C
I =30mA  
V
C
I =100μA  
7.0  
V
E
V
V
V
I =150mA, I =15mA  
0.2  
0.5  
1.1  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
I =150mA, I =15mA  
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA  
50  
90  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
C
V
V
V
V
V
V
V
V
=10V, I =10mA  
C
FE  
=10V, I =150mA  
100  
50  
300  
FE  
C
=10V, I =500mA  
FE  
C
=10V, I =1.0A  
15  
FE  
C
f
=10V, I =50mA, f=20MHz  
100  
400  
12  
MHz  
pF  
T
C
C
C
=10V, I =0, f=1.0MHz  
E
ob  
=0.5V, I =0, f=1.0MHz  
60  
pF  
ib  
C
NF  
=10V, I =100μA,  
C
R =1.0kΩ, f=1.0kHz  
4.0  
dB  
S
R6 (9-November 2010)  

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