Datasheet > CZT2955_10

CZT2955_10

更新时间： 2024-02-23 00:39:25

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	599K
描述
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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CZT2955_10 数据手册

CZT2955 PNP

CZT3055 NPN

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2955 and

CZT3055 types are surface mount epoxy molded

complementary silicon transistors manufactured by the

epitaxial base process, designed for surface mounted

power amplifier applications up to 6.0 amps.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

100

CBO

CER

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

7.0

Continuous Collector Current

Continuous Base Current

Power Dissipation

6.0

3.0

2.0

°C

°C/W

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

62.5

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

700

1.0

UNITS

μA

=30V

CEO

CEV

EBO

=100V, V =1.5V

=7.0V

5.0

I =30mA, R =100Ω

CER

CEO

I =30mA

I =4.0A, I =400mA

1.1

1.5

CE(SAT)

BE(ON)

=4.0V, I =4.0A

5.0

2.5

=4.0V, I =6.0A

=10V, I =500mA, f=1.0MHz

MHz

R4 (1-March 2010)

中文翻译

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