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CY7C1303V25

更新时间: 2024-09-12 23:45:23
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28页 231K
描述
Memory

CY7C1303V25 数据手册

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y
yy yy  
CY7C1303V25  
CY7C1306V25  
Preliminary  
18 Mb Burst of 2 Pipelined SRAM with QDR Architecture  
Features  
Functional Description  
• Separate Independent Read and Write Data Ports  
— Supports concurrent transactions  
• 167 MHz Clock for High Bandwidth  
— 2.5 ns Clock-to-Valid access time  
• 2-Word Burst on all accesses  
• DoubleDataRate(DDR)interfacesonbothRead&Write  
Ports (data transferred at 333 MHz) @167 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two output clocks (C and C) accounts for clock skew  
and flight time mis-matches  
• Single multiplexed address input bus latches address  
inputs for both READ and WRITE ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• 2.5V core power supply with HSTL Inputs and Outputs  
The CY7C1303V25 and CY7C1306V25 are 2.5V Synchro-  
nous Pipelined SRAMs equipped with QDR architecture. QDR  
architecture consists of two separate ports to access the mem-  
ory array. The Read port has dedicated Data Outputs to sup-  
port Read operations and the Write Port has dedicated Data  
inputs to support Write operations. Access to each port is ac-  
complished through a common address bus. The Read ad-  
dress is latched on the rising edge of the K clock and the Write  
address is latched on the rising edge of K clock. QDR has  
separate data inputs and data outputs to completely eliminate  
the need to “turn-around” the data bus required with common  
I/O devices. Accesses to the CY7C1303V25/CY7C1306V25  
Read and Write ports are completely independent of one an-  
other. All accesses are initiated synchronously on the rising  
edge of the positive input clock (K). In order to maximize data  
throughput, both Read and Write ports are equipped with Dou-  
ble Data Rate (DDR) interfaces. Therefore, data can be trans-  
ferred into the device on every rising edge of both input clocks  
(K and K) and out of the device on every rising edge of the  
output clock (C and C) thereby maximizing performance while  
simplifying system design. Each address location is associat-  
ed with two 18-bit words (CY7C1303V25) or two 36-bit words  
(CY7C1306V25) that burst sequentially into or out of the de-  
vice.  
• 13x15 mm 1.0 mm pitch fBGA package, 165 ball  
(11x15 matrix) Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–1.9V)  
• JTAG Interface  
• Variable Impedance HSTL  
Configurations  
CY7C1303V25 – 1 Mb x 18  
CY7C1306V25 – 512K x 36  
Depth expansion is accomplished with a Port Select input for  
each port. Each Port Selects allow each port to operate inde-  
pendently.  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C input clocks. Writes are con-  
ducted with on-chip synchronous self-timed write circuitry.  
Logic Block Diagram (CY7C1303V25)  
D[17:0]  
18  
Write  
Write  
Data Reg  
Data Reg  
Address  
Register  
A
(18:0)  
Address  
Register  
A(18:0)  
19  
19  
512Kx18 512Kx18  
Memory Memory  
Array  
Array  
K
CLK  
Gen.  
RPS  
Control  
Logic  
K
C
C
Read Data Reg.  
36  
18  
Vref  
18  
Reg.  
Reg.  
Reg.  
18  
18  
Control  
Logic  
WPS  
BWS0  
18  
Q[17:0]  
BWS1  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05100 Rev. *A  
Revised December 11, 2002  

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