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CY7C1218F-133ACT PDF预览

CY7C1218F-133ACT

更新时间: 2024-09-17 19:35:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
16页 354K
描述
Cache SRAM, 32KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1218F-133ACT 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:4 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:1179648 bit
内存集成电路类型:CACHE SRAM内存宽度:36
功能数量:1端子数量:100
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX36
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

CY7C1218F-133ACT 数据手册

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CY7C1218F  
1-Mb (32K x36) Pipelined Sync SRAM  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Features  
• Registered inputs and outputs for pipelined operation  
• 32K × 36 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
Control inputs (  
,
,
and  
), Write Enables  
ADV  
ADSC ADSP  
(
, and ), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:D]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
Addresses and chip enables are registered at rising edge of  
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
clock when either Address Strobe Processor (  
) or  
ADSP  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• Provide high-performance 3-1-1-1 access rate  
ADV  
• User-selectable burst counter supporting Intel  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
Pentium interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
Functional Description[1]  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1218F operates from a +3.3V core power supply  
while all outputs may operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
The CY7C1218F SRAM integrates 32,768 x 36 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQD,DQ  
BYTE  
WRITE REGISTER  
D
DQ  
BYTE  
WRITE DRIVER  
D ,DQPD  
BW  
D
DQ  
BYTE  
WRITE DRIVER  
C ,DQPC  
DQ  
BYTE  
WRITE REGISTER  
C,DQPC  
DQs  
DQP  
DQP  
BW  
C
OUTPUT  
BUFFERS  
A
OUTPUT  
REGISTERS  
MEMORY  
ARRAY  
SENSE  
AMPS  
B
C
DQB,DQP  
B
E
DQB,DQP  
B
DQP  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BW  
BW  
B
A
DQP  
D
DQA,DQP  
A
DQ  
A ,DQPA  
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
1
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05422 Rev. **  
Revised January 26, 2004  

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