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CY7C1217H-133AXC PDF预览

CY7C1217H-133AXC

更新时间: 2024-09-17 04:35:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
16页 383K
描述
1-Mbit (32K x 36) Flow-Through Sync SRAM

CY7C1217H-133AXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP, QFP100,.63X.87针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.62
最长访问时间:6.5 ns其他特性:FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:1179648 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.04 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.225 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm

CY7C1217H-133AXC 数据手册

 浏览型号CY7C1217H-133AXC的Datasheet PDF文件第2页浏览型号CY7C1217H-133AXC的Datasheet PDF文件第3页浏览型号CY7C1217H-133AXC的Datasheet PDF文件第4页浏览型号CY7C1217H-133AXC的Datasheet PDF文件第5页浏览型号CY7C1217H-133AXC的Datasheet PDF文件第6页浏览型号CY7C1217H-133AXC的Datasheet PDF文件第7页 
CY7C1217H  
1-Mbit (32K x 36) Flow-Through Sync SRAM  
Features  
Functional Description[1]  
The CY7C1217H is a 32K x 36 synchronous cache RAM  
designed to interface with high-speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automati-  
cally for the rest of the burst access. All synchronous inputs  
are gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, and ADV), Write Enables  
(BW[A:D], and BWE), and Global Write (GW). Asynchronous  
inputs include the Output Enable (OE) and the ZZ pin.  
• 32K x 36 common I/O  
• 3.3V core power supply (VDD  
)
• 2.5V/3.3V I/O power supply (VDDQ  
)
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz version)  
• Provide high-performance 2-1-1-1 access rate  
• User-selectable burst counter supporting Intel®  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed write  
The CY7C1217H allows either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects  
an interleaved burst sequence, while a LOW selects a linear  
burst sequence. Burst accesses can be initiated with the  
Processor Address Strobe (ADSP) or the cache Controller  
Address Strobe (ADSC) inputs. Address advancement is  
controlled by the Address Advancement (ADV) input.  
• Asynchronous output enable  
• Available in JEDEC-standard lead-free 100-Pin TQFP  
package  
• “ZZ” Sleep Mode option  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
The CY7C1217H operates from a +3.3V core power supply  
while all outputs may operate either with a +2.5V or +3.3V  
supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.0  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum Standby Current  
225  
205  
mA  
mA  
40  
40  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05670 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 6, 2006  
[+] Feedback  

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