CY62148ESL MoBL®
4-Mbit (512K x 8) Static RAM
Features
Functional Description
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Very high speed: 55 ns
The CY62148ESL is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. Placing the device into standby mode reduces
power consumption by more than 99 percent when deselected
(CE HIGH). The eight input and output pins (IO0 through IO7) are
placed in a high impedance state when the device is deselected
(CE HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V
Ultra low standby power
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Typical standby current: 1 μA
Maximum standby current: 7 μA
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Ultra low active power
Typical active current: 2 mA at f = 1 MHz
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Easy memory expansion with CE and OE features
Automatic power down when deselected
CMOS for optimum speed and power
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is
then written into the location specified on the address pins (A0
through A18).
Available in Pb-free 32-pin STSOP package
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the IO pins.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
Logic Block Diagram
A
A
A
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO
0
INPUT BUFFER
IO
1
IO
2
512K x 8
ARRAY
IO
3
IO
4
9
10
11
12
IO
5
IO
6
CE
IO
POWER
DOWN
7
COLUMN DECODER
WE
OE
Cypress Semiconductor Corporation
Document #: 001-50045 Rev. **
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised January 21, 2009
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