5秒后页面跳转
CY62148ESL PDF预览

CY62148ESL

更新时间: 2024-01-22 00:33:56
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 324K
描述
4-Mbit (512K x 8) Static RAM

CY62148ESL 数据手册

 浏览型号CY62148ESL的Datasheet PDF文件第2页浏览型号CY62148ESL的Datasheet PDF文件第3页浏览型号CY62148ESL的Datasheet PDF文件第4页浏览型号CY62148ESL的Datasheet PDF文件第5页浏览型号CY62148ESL的Datasheet PDF文件第6页浏览型号CY62148ESL的Datasheet PDF文件第7页 
CY62148ESL MoBL®  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description  
Very high speed: 55 ns  
The CY62148ESL is a high performance CMOS static RAM  
organized as 512K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption. Placing the device into standby mode reduces  
power consumption by more than 99 percent when deselected  
(CE HIGH). The eight input and output pins (IO0 through IO7) are  
placed in a high impedance state when the device is deselected  
(CE HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW and WE LOW).  
Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V  
Ultra low standby power  
Typical standby current: 1 μA  
Maximum standby current: 7 μA  
Ultra low active power  
Typical active current: 2 mA at f = 1 MHz  
Easy memory expansion with CE and OE features  
Automatic power down when deselected  
CMOS for optimum speed and power  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is  
then written into the location specified on the address pins (A0  
through A18).  
Available in Pb-free 32-pin STSOP package  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under  
these conditions, the contents of the memory location specified  
by the address pins appear on the IO pins.  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
A
A
A
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO  
0
INPUT BUFFER  
IO  
1
IO  
2
512K x 8  
ARRAY  
IO  
3
IO  
4
9
10  
11  
12  
IO  
5
IO  
6
CE  
IO  
POWER  
DOWN  
7
COLUMN DECODER  
WE  
OE  
Cypress Semiconductor Corporation  
Document #: 001-50045 Rev. **  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised January 21, 2009  
[+] Feedback  

与CY62148ESL相关器件

型号 品牌 获取价格 描述 数据表
CY62148ESL_10 CYPRESS

获取价格

4-Mbit (512 K × 8) Static RAM
CY62148ESL_11 CYPRESS

获取价格

4-Mbit (512 K x 8) Static RAM Automatic power-down when deselected
CY62148ESL-55ZAXA CYPRESS

获取价格

4-Mbit (512 K × 8) Static RAM
CY62148ESL-55ZAXAT CYPRESS

获取价格

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 13.40 MM, LEAD FREE, STSOP-32
CY62148ESL-55ZAXI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148ESL-55ZAXI INFINEON

获取价格

Asynchronous SRAM
CY62148ESL-55ZAXIT INFINEON

获取价格

Asynchronous SRAM
CY62148EV30 CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148EV30_09 CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148EV30_12 CYPRESS

获取价格

4-Mbit (512 K × 8) Static RAM