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CY62148EV30LL-45BVXI PDF预览

CY62148EV30LL-45BVXI

更新时间: 2024-11-18 02:52:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 1007K
描述
4-Mbit (512K x 8) Static RAM

CY62148EV30LL-45BVXI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:VFBGA, BGA36,6X8,30针数:36
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41Factory Lead Time:1 week
风险等级:1.01Is Samacsys:N
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-XBGA-B36JESD-609代码:e1
长度:8 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:36字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:VFBGA
封装等效代码:BGA36,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1 mm
最大待机电流:0.000007 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:6 mm
Base Number Matches:1

CY62148EV30LL-45BVXI 数据手册

 浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第2页浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第3页浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第4页浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第5页浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第6页浏览型号CY62148EV30LL-45BVXI的Datasheet PDF文件第7页 
CY62148EV30 MoBL®  
4-Mbit (512K x 8) Static RAM  
Functional Description [2]  
Features  
• Very high speed: 45 ns  
The CY62148EV30 is a high performance CMOS static RAM  
organized as 512K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current.  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
also has an automatic power down feature that significantly  
reduces power consumption. Placing the device into standby  
mode reduces power consumption by more than 99% when  
deselected (CE HIGH). The eight input and output pins (IO0  
through IO7) are placed in a high impedance state when the  
device is deselected (CE HIGH), the outputs are disabled (OE  
HIGH), or during a write operation (CE LOW and WE LOW).  
— Wide voltage range: 2.20V – 3.60V  
• Pin compatible with CY62148DV30  
• Ultra low standby power  
— Typical standby current: 1 µA  
— Maximum standby current: 7 µA (Industrial)  
• Ultra low active power  
— Typical active current: 2 mA @ f = 1 MHz  
• Easy memory expansion with CE, and OE features  
• Automatic power down when deselected  
• CMOS for optimum speed and power  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight IO pins (IO0 through IO7)  
is then written into the location specified on the address pins  
(A0 through A18).  
• Available in Pb-free 36-ball VFBGA, 32-pin TSOP II and  
32-pin SOIC [1] packages  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH.  
Under these conditions, the contents of the memory location  
specified by the address pins appear on the IO pins.  
Logic Block Diagram  
A
0
IO  
0
INPUT BUFFER  
A
1
A
2
IO  
1
A
3
A
4
IO  
2
A
5
A
6
512K x 8  
ARRAY  
IO  
3
A
A
A
A
A
A
7
8
IO  
4
9
10  
11  
12  
IO  
5
IO  
6
CE  
IO  
POWER  
DOWN  
7
COLUMN DECODER  
WE  
OE  
Notes  
1. SOIC package is available only in 55 ns speed bin.  
2. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05576 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised April 18, 2007  
[+] Feedback  

CY62148EV30LL-45BVXI 替代型号

型号 品牌 替代类型 描述 数据表
CY62148EV30LL-45BVI CYPRESS

完全替代

4-Mbit (512 K × 8) Static RAM
IS62WV5128BLL-55BLI ISSI

功能相似

512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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